Feature |
|
|
JEDEC standard VDD/VDDQ = 1.8V
+/- 0.1V |
|
|
All inputs and outputs are
compatible with SSTL_18 interface. |
|
|
Fully differential clock
inputs (CK,/CK) operation. |
|
|
4 banks |
|
|
Posted CAS |
|
|
Burst Length:4 and 8 |
|
|
Programmable CAS latency (CL):
3, 4 and 5. |
|
|
Programmable Additive Latency
(AL):0, 1 , 2, 3, and 4. |
|
|
Write Latency (WL) = READ
Latency (RL)-1. |
|
|
Read Latency (RL)= Programmable
Additive Latency (AL)+ CAS Latency (CL) |
|
|
Bi-directional Differential
Data Strobe (DQS) |
|
|
Data inputs on DQS centers
when write. |
|
|
Data outputs on DQS, /DQS edges when read. |
|
|
On chip DLL align DQ, DQS and
/DQS transition with CK transition. |
|
|
DM mask write data-in at the
both rising and falling edges of the data strobe. |
|
|
Sequential & interleaved Burst
type available. |
|
|
Off-Chip Driver (OCD)
impedance Adjustment. |
|
|
On Die Termination (ODT) |
|
|
Auto refresh and self refresh. |
|
|
8,192 Refresh Cycles / 64ms |
|
|
Average refresh period 7.8us
at lower than Tcase 85℃,
3.9us at 85℃<Tcase≦95℃ |
|
|
Partial Array Self-Refresh (PASR) |
|
|
RoHS Compliance |
|
|
High Temperature self-refresh
rate enable |