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The EM44CM0884LBA is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 16Mbits x 4 banks by 8 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1,(3) Off-Chip Driver (OCD) impedance adjustment and On Die Termination (4)normal and weak strength data output driver.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and/CAS multiplexing style.

The 512Mb DDR2 device operates with a single power supply: 1.8V 0.1V VDD and VDDQ. Available package: TFBGA-60Ball (8mmx10mm,0.8mm x 0.8mm ball pitch).

JEDEC standard VDD/VDDQ = 1.8V +/- 0.1V
All inputs and outputs are compatible with SSTL_18 interface.
Fully differential clock inputs (CK,/CK) operation.
4 banks
Posted CAS
Burst Length:4 and 8
Programmable CAS latency (CL): 3, 4 and 5.
Programmable Additive Latency (AL):0, 1 , 2, 3, and 4.
Write Latency (WL) = READ Latency (RL)-1.
Read Latency (RL)= Programmable Additive Latency (AL)+ CAS Latency (CL)
Bi-directional Differential Data Strobe (DQS)
Data inputs on DQS centers when write.
Data outputs on DQS, /DQS edges when read.
On chip DLL align DQ, DQS and /DQS transition with CK transition.
DM mask write data-in at the both rising and falling edges of the data strobe.
Sequential & interleaved Burst type available.
Off-Chip Driver (OCD) impedance Adjustment.
On Die Termination (ODT)
  Auto refresh and self refresh.

8,192 Refresh Cycles / 64ms

  Average refresh period 7.8us at lower than Tcase 85, 3.9us at 85℃<Tcase≦95
  Partial Array Self-Refresh (PASR)
  RoHS Compliance
  High Temperature self-refresh rate enable
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